Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Description
FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
February 2007
FDFMA2P857
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
–20V, –3.0A, 120mΩ Features
MOSFET:
Max rDS(on) = 120mΩ at VGS = –4.5V, ID = –3.0A Max rDS(on) = 160mΩ at VGS = –2.5V, ID = –2.5A Max rDS(on) = 240mΩ at VGS = –1.8V, ID = –1.0A
General Descripti...
