N & P-Channel Enhancement Mode Power MOSFET
Description
HM4606
N and P-Channel Enhancement Mode Power MOSFET
Description
The HM4606 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.
General Features
● N-Channel VDS = 30V,ID =7.0A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.5V
● P-Channel VDS = -30V,ID =...
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