Epitaxial Transistor. BC848 Datasheet

BC848 Transistor. Datasheet pdf. Equivalent


SEMTECH BC848
BC846…BC850
NPN Silicon Epitaxial Transistor
for switching and amplifier applications
As complementary types the PNP transistors
BC856...BC860 is recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
BC846
VCBO
80
V
BC847, BC850
VCBO
50
V
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
HPeak Collector Current
Power Dissipation
CJunction Temperature
Storage Temperature Range
BC848, BC849
BC846
BC847, BC850
BC848, BC849
BC846, BC847
BC848, BC849, BC850
VCBO
VCEO
VCEO
VCEO
VEBO
VEBO
IC
ICM
Ptot
Tj
Tstg
30
65
45
30
6
5
100
200
200
150
- 65 to + 150
V
V
V
V
V
V
mA
mA
mW
OC
OC
ECharacteristics at Ta = 25 OC
TParameter
DC Current Gain
at VCE = 5 V, IC = 2 mA
MCollector Base Cutoff Current
at VCB = 30 V
ECollector Emitter Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
Sat IC = 100 mA, IB = 5 mA
Current Gain Group A
B
C
Symbol
hFE
hFE
hFE
ICBO
VCEsat
VCEsat
Min.
110
200
420
-
-
-
Typ.
-
-
-
-
-
-
Max.
220
450
800
15
250
600
Unit
-
-
-
nA
mV
mV
Base Emitter On Voltage
at VCE = 5 V, IC = 2 mA
at VCE = 5 V, IC = 10 mA
VBE(on)
580
-
700 mV
VBE(on)
-
- 720 mV
Transition Frequency
at VCE = 5 V, IC = 10 mA, f = 100 MHz
fT - 300 - MHz
Output Capacitance
at VCB = 10 V, f = 1 MHz
Cob - - 6 pF
Input Capacitance
at VEB = 0.5 V, f = 1 MHz
Cib - 9 - pF
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated08/08/2012 Rev01


BC848 Datasheet
Recommendation BC848 Datasheet
Part BC848
Description NPN Silicon Epitaxial Transistor
Feature BC848; BC846 … BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications As complemen.
Manufacture SEMTECH
Datasheet
Download BC848 Datasheet




SEMTECH BC848
BC846…BC850
STATIC CHARACTERISTIC
BASE-EMITTER ON VOLTAGE
100 100
I B=400 A
I B=350 A
80
I B=300 A
I B=250 A
60
I B=200 A
VCE=2V
10
40
I B=150 A
1
I B=100 A
20
I B=50 A
0.1
0
4
8
12 16
20
VCE(V),COLLECTOR-EMITTER VOLTAGE
10000
DC CURRENT GAIN
VCE=5V
H1000
0 0.2 0.4 0.6 0.8 1.0
VBE(V),BASE-EMITTER VOLTAGE
1.2
CURRENT GAIN BANDWIDTH PRODUCT
1000
VCE=5V
100
C100
TE10
1 10 100 1000
I C(mA),COLLECTOR CURRENT
MBASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
E10000
S IC=10IB
10
1
0.1
1 10 100
I C(mA),COLLECTOR CURRENT
COLLECTOR OUTPUT CAPACITANCE
100
f=1MHz
1000
VBE(sat)
10
100 1
10
1
VCE(sat)
10
100 1000
I C(mA),COLLECTOR CURRENT
0.1
1
10 100 1000
VCB(V),COLLECTOR-BASE VOLTAGE
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated08/08/2012 Rev01







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