NPN Transistors. KTC3876S Datasheet

KTC3876S Transistors. Datasheet pdf. Equivalent


Kexin KTC3876S
SMD Type
Transistors
NPN Transistors
KTC3876 (KTC3876S)
Features
Excellent hFE Linearity
Complementary to KTA1505/KTA1505S
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
Rating
35
30
5
500
50
150
150
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
VCBO
VCEO
VEBO
Ic= 100uAIE= 0
Ic= 1 mAIB=0
IE= 100uAIC= 0
Collector-base cut-off current
ICBO VCB= 35V , IE= 0
Emitter cut-off current
IEBO VEB= 5V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB=10mA
Base - emitter saturation voltage
VBE(sat) IC=100mA, IB=10mA
Base - emitte voltage
VBE VCE= 1V, IC=100mA
VCE= 1V, IC=100mA
DC current gain
hFE
VCE= 6V, IC=400mA
O
Y
Collector output capacitance
Cob VCB= 6V, IE= 0,f=1MHz
Transition frequency
fT VCE= 6V, IC= 20mA
Classification of hfe(1)
Type
KTC3876-O
KTC3876-Y
KTC3876-G
Range
70-140
120-240
200-400
Marking
WO
WY
WG
Unit
V
mA
mW
Min Typ Max Unit
35
30 V
5
0.1
uA
0.1
0.25
1.2 V
1
70 400
25
40
7 pF
300 MHz
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KTC3876S Datasheet
Recommendation KTC3876S Datasheet
Part KTC3876S
Description NPN Transistors
Feature KTC3876S; SMD Type Transistors NPN Transistors KTC3876 (KTC3876S) ■ Features ● Excellent hFE Linearity ● Co.
Manufacture Kexin
Datasheet
Download KTC3876S Datasheet








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