IGBT. NGTG50N60FWG Datasheet

NGTG50N60FWG IGBT. Datasheet pdf. Equivalent

NGTG50N60FWG Datasheet
Recommendation NGTG50N60FWG Datasheet
Part NGTG50N60FWG
Description IGBT
Feature NGTG50N60FWG; NGTG50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effectiv.
Manufacture ON Semiconductor
Datasheet
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ON Semiconductor NGTG50N60FWG
NGTG50N60FWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
Features
Optimized for Very Low VCEsat
Low Switching Loss Reduces System Power Dissipation
5 ms ShortCircuit Capability
These are PbFree Devices
Typical Applications
Solar Inverters
Uninterruptible Power Supples (UPS)
Motor Drives
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES 600 V
IC A
100
50
Pulsed collector current, Tpulse
limited by TJmax
Shortcircuit withstand time
VGE = 15 V, VCE = 300 V,
TJ +150°C
Gateemitter voltage
Transient GateEmitter Voltage
ICM 200 A
tSC 5 ms
VGE
$20
V
$30
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD W
223
89
Operating junction temperature
range
TJ 55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
50 A, 600 V
VCEsat = 1.50 V
C
G
E
G
C
E
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
G50N60F
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTG50N60FWG
Package Shipping
TO247 30 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2012
December, 2012 Rev. 0
1
Publication Order Number:
NGTG50N60FW/D



ON Semiconductor NGTG50N60FWG
NGTG50N60FWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junctiontocase, for IGBT
Thermal resistance junctiontoambient
Symbol
RqJC
RqJA
Value
0.56
40
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 500 mA
Collectoremitter saturation voltage
Gateemitter threshold voltage
Collectoremitter cutoff current, gate
emitter shortcircuited
Gate leakage current, collectoremitter
shortcircuited
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 50 A, TJ = 150°C
VGE = VCE, IC = 350 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
VGE = 20 V , VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 480 V, IC = 50 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
VCC
=
T4J00=
25°C
V, IC =
50
A
Rg = 10 W
VGE = 0 V/ 15 V*
Turnoff switching loss
Total switching loss
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
VCC
=T4J0=0
150°C
V, IC =
50
A
Rg = 10 W
VGE = 0 V/ 15 V*
Turnoff switching loss
Total switching loss
*Includes diode reverse recovery loss using NGTB50N60FWG.
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Min
600
1.25
4.5
Typ
1.45
1.7
5.5
7300
195
170
310
60
150
117
43
285
105
1.1
1.2
2.3
112
45
300
214
1.4
2.0
3.4
Max
1.7
6.5
0.5
2
200
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
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ON Semiconductor NGTG50N60FWG
NGTG50N60FWG
TYPICAL CHARACTERISTICS
250
TJ = 25°C
200
VGE = 17 V to 13 V
150
11 V
250
TJ = 150°C
200
150
VGE = 17 V to 13 V
11 V
100
50
0
0
10 V
9V
7V 8V
12 3 456 7
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 1. Output Characteristics
8
100
50
0
0
10 V
9V
8V
7V
1 2 3 4 5 6 78
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 2. Output Characteristics
250
VGE = 17 V to 13 V
200
150
100
TJ = 40°C
11 V
10 V
50
9V
0 7 V to 8 V
0 1 2 3 4 5 6 78
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 3. Output Characteristics
200
180
160
140
120
100
80
60
40
20
00
TJ = 25°C
TJ = 150°C
4 8 12
VGE, GATEEMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
16
3.0
2.5
2.0
1.5
1.0
0.5
0
75
IC = 100 A
IC = 50 A
IC = 10 A
IC = 5 A
10000
1000
100
Cies
Coes
Cres
25 25
75 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs. TJ
10
175 0 10 20 30 40 50 60 70 80 90 100
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
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