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Planar Transistor. KTC3875 Datasheet

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Planar Transistor. KTC3875 Datasheet






KTC3875 Transistor. Datasheet pdf. Equivalent




KTC3875 Transistor. Datasheet pdf. Equivalent





Part

KTC3875

Description

NPN Silicon Epitaxial Planar Transistor



Feature


Production specification NPN Silicon Ep itaxial Planar Transistor FEATURES z C omplementary To KTA1504. z Excellent HF E Linearity. z Low noise. Pb Lead-free KTC3875 APPLICATIONS z General purpo se application, switching application. ORDERING INFORMATION Type No. Markin g KTC3875 ALO/ALY/ALG/ALL SOT-23 Pac kage Code SOT-23 MAXIMUM RATING @ Ta=2 5℃ unless otherwis.
Manufacture

GME

Datasheet
Download KTC3875 Datasheet


GME KTC3875

KTC3875; e specified Symbol Parameter Value V CBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Em itter-Base Voltage 5 IC Collector Cur rent -Continuous 150 IB Base Current 30 PC Collector Power Dissipation 15 0 Tj,Tstg Junction and Storage Temper ature -55 to +150 Units V V V mA mA m W ℃ C056 Rev.A www.gmicroelec.com 1 Production specifi.


GME KTC3875

cation NPN Silicon Epitaxial Planar Tra nsistor KTC3875 ELECTRICAL CHARACTERI STICS @ Ta=25℃ unless otherwise speci fied Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base brea kdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown volt age V(BR)CEO IC=1mA,IB=0 50 V Emitte r-base breakdown voltage V(BR)EBO IE=1 00μA,IC=0 5 V Coll.


GME KTC3875

ector cut-off current Emitter cut-off cu rrent ICBO VCB=60V,IE=0 IEBO VEB=5V,IC =0 0.1 μA 0.1 μA DC current gain h FE VCE=6V,IC=2mA 70 700 Collector-em itter saturation voltage VCE(sat) IC=10 0mA, IB=10mA 0.1 0.25 V Transition fr equency Collector output capacitance No ise figure fT VCE=10V, IC= 1mA 80 M Hz Cob VCB=10V,IE=0,f=1MHz NF VCE=6V ,IC=0.1mA, F=1KHz,Rg.

Part

KTC3875

Description

NPN Silicon Epitaxial Planar Transistor



Feature


Production specification NPN Silicon Ep itaxial Planar Transistor FEATURES z C omplementary To KTA1504. z Excellent HF E Linearity. z Low noise. Pb Lead-free KTC3875 APPLICATIONS z General purpo se application, switching application. ORDERING INFORMATION Type No. Markin g KTC3875 ALO/ALY/ALG/ALL SOT-23 Pac kage Code SOT-23 MAXIMUM RATING @ Ta=2 5℃ unless otherwis.
Manufacture

GME

Datasheet
Download KTC3875 Datasheet




 KTC3875
Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Complementary To KTA1504.
z Excellent HFE Linearity.
z Low noise.
Pb
Lead-free
KTC3875
APPLICATIONS
z General purpose application, switching application.
ORDERING INFORMATION
Type No.
Marking
KTC3875
ALO/ALY/ALG/ALL
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
50
VEBO
Emitter-Base Voltage
5
IC Collector Current -Continuous
150
IB Base Current
30
PC Collector Power Dissipation
150
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mA
mW
C056
Rev.A
www.gmicroelec.com
1




 KTC3875
Production specification
NPN Silicon Epitaxial Planar Transistor
KTC3875
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
60
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
5
V
Collector cut-off current
Emitter cut-off current
ICBO VCB=60V,IE=0
IEBO VEB=5V,IC=0
0.1 μA
0.1 μA
DC current gain
hFE VCE=6V,IC=2mA
70
700
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA
0.1 0.25 V
Transition frequency
Collector output capacitance
Noise figure
fT
VCE=10V, IC= 1mA
80
MHz
Cob VCB=10V,IE=0,f=1MHz
NF
VCE=6V,IC=0.1mA,
F=1KHz,Rg=10K
2.0 3.5 pF
1.0 10 dB
CLASSIFICATION OF hFE
Rank
Range
Marking
O
70-140
ALO
Y
120-240
ALY
GR
200-400
ALG
BL
350-700
ALL
C056
Rev.A
www.gmicroelec.com
2




 KTC3875
Production specification
NPN Silicon Epitaxial Planar Transistor
KTC3875
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
C056
Rev.A
www.gmicroelec.com
3



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