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2SK260 Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part | 2SK260 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for high voltage,high speed applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
400
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
5
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature 200 ℃ Tstg . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SK260 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for high voltage,high speed applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
400
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
5
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature 200 ℃ Tstg . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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