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2SK414 Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part | 2SK414 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
DESCRIPT ION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 160V(M in) ·Fast Switching Speed ·100% avala nche tested ·Minimum Lot-to-Lot variat ions for robust device
performance and reliable operation
APPLICATIONS ·High speed switching. ·High Cutoff frequenc y. ·No secondary breakdown. ·Suitable for switching regulator，DC-DC conver ter, PWM amplifiers，and ultrasonic po wer oscillators. ABSOLUTE MAXIMUM RATI NGS(Ta=25℃) SYMBOL ARAMETER VALUE UN IT VDSS Drain-Source Voltage (VGS=0) 160 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SK414 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
DESCRIPT ION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 160V(M in) ·Fast Switching Speed ·100% avala nche tested ·Minimum Lot-to-Lot variat ions for robust device
performance and reliable operation
APPLICATIONS ·High speed switching. ·High Cutoff frequenc y. ·No secondary breakdown. ·Suitable for switching regulator，DC-DC conver ter, PWM amplifiers，and ultrasonic po wer oscillators. ABSOLUTE MAXIMUM RATI NGS(Ta=25℃) SYMBOL ARAMETER VALUE UN IT VDSS Drain-Source Voltage (VGS=0) 160 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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