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3DD8F

Silicon NPN Power Transistor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD8F DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(...

Inchange Semiconductor

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