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6N80

N-Channel MOSFET Transistor

Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 6N80 ·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION. Switch-mode and reson...

Inchange Semiconductor

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