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MTED6N25H8
N-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp. Spec. No. : C894H8 Issued Date : 2016.07.26 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTED6N25H8 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TA=25°C RDSON(TYP) VGS=10V, ID=5A 250V 4.6A 1.2A 426mΩ Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanch...
Cystech Electonics
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