isc Silicon PNP Power Transistor
2SB1152
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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