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2N6040

Silicon PNP Power Transistors

Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A ·Complement to Type 2N6043 isc Product Specification 2N6040 APPLICATIONS ·Designed for gen...

Inchange Semiconductor

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