MSN06B0F
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Feature
● VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V
(Typ:5.7mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for g...
