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KTB1369

Silicon PNP Power Transistors

Description

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -0.5A, IB= -50mA) ·Complement to Type KTD2061 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High Voltage application ·TV, monitor ve...

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