G30FP Datasheet: HIGH VOLTAGE DIODES





G30FP HIGH VOLTAGE DIODES Datasheet

Part Number G30FP
Description HIGH VOLTAGE DIODES
Manufacture GETE ELECTRONICS
Total Page 1 Pages
PDF Download Download G30FP Datasheet PDF

Features: HVGT G30FP 30kV 10mA HIGH VOLTAGE DIODE S G30FP is high reliability resin mold ed type high voltage diode in small siz e package which is sealed a multilayed mesa type silicon chip by epoxy resin. Features High speed switching High Curr ent High surge resisitivity for CRT dis charge High reliability design High Vol tage Applications X light Power supply Laser Voltage doubler circuit Microwave emission power Maximum Ratings and Cha racteristics Absolute Maximum Ratings Outline Drawings : mm Lot No. Cathode Mark o 3.0 o 0.6 27 min. 12 27 min. DO-312 Cathode Mark Type Mark G30 FP Items Symbols Condition Repetiti ve Peak Renerse Voltage V RRM Average Output Current IO Ta=25°C,Resistive Load Suege Current I FSM Junction Te mperature Tj Allowable Operation Case Temperature Storage Temperature Tc Ts tg G30FP 30 10 0.8 125 120 -40 to +125 Units kV mA A peak °C °C °C Elect rical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions Maximum Forw.

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HVGT
G30FP
30kV 10mA HIGH VOLTAGE DIODES
G30FP is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Features
High speed switching
High Current
High surge resisitivity for CRT discharge
High reliability design
High Voltage
Applications
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Outline Drawings : mm
Lot No.
Cathode Mark
o 3.0
o 0.6
27 min.
12 27 min.
DO-312
Cathode Mark
Type
Mark
G30FP
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
V RRM
Average Output Current
IO Ta=25°C,Resistive Load
Suege Current
I FSM
Junction Temperature
Tj
Allowable Operation Case Temperature
Storage Temperature
Tc
Tstg
G30FP
30
10
0.8
125
120
-40 to +125
Units
kV
mA
A peak
°C
°C
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF at 25°C,IF =IF(AV)
Maximum Reverse Current
IR1 at 25°C,VR =VRRM
IR2 at 100°C,VR =VRRM
Maximum Reverse Recovery Time
Trr at 25°C
G30FP
55
2.0
5.0
100
Units
V
uA
uA
nS
Junction Capacitance
Cj at 25°C,VR=0V,f=1MHz
--
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com E-mail:sales@getedz.com
2015

  






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