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50N06 Datasheet, Equivalent, N-CHANNEL MOSFET.

N-CHANNEL MOSFET

N-CHANNEL MOSFET

 

 

 

Part 50N06
Description N-CHANNEL MOSFET
Feature 50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=1 6mΩ@VGS=10V/25A  Low gate charge Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt cap ability TO-220AB 50N06 ITO-220AB 50N0 6F TO-263 50N06B TO-262 50N06H Absol ute Maximum Ratings(TC=25℃,unless oth erwise noted) Parameter Symbol Drain -Source Voltage Gate-Source Voltage Con tinuous Drain Current Pulsed Drain Curr ent(Note1) Single Pulse Avalanche Energ y (Note 2) Avalanche Current(Note1) Rep etitive Avalanche Energy (Note1) Revers e Diode dV/dt (Note 3) Operating Juncti on and Storage Temperature Ra .
Manufacture CHONGQING PINGYANG
Datasheet
Download 50N06 Datasheet
Part 50N06
Description N-CHANNEL MOSFET
Feature 50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=1 6mΩ@VGS=10V/25A  Low gate charge Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt cap ability TO-220AB 50N06 ITO-220AB 50N0 6F TO-263 50N06B TO-262 50N06H Absol ute Maximum Ratings(TC=25℃,unless oth erwise noted) Parameter Symbol Drain -Source Voltage Gate-Source Voltage Con tinuous Drain Current Pulsed Drain Curr ent(Note1) Single Pulse Avalanche Energ y (Note 2) Avalanche Current(Note1) Rep etitive Avalanche Energy (Note1) Revers e Diode dV/dt (Note 3) Operating Juncti on and Storage Temperature Ra .
Manufacture CHONGQING PINGYANG
Datasheet
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50N06

50N06
50N06

50N06

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