MOSFET. FDD850N10L Datasheet

FDD850N10L Datasheet PDF, Equivalent


Part Number

FDD850N10L

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
PDF Download
Download FDD850N10L Datasheet PDF


FDD850N10L Datasheet
FDD850N10L
N-Channel PowerTrench® MOSFET
100 V, 15.7 A, 75 mΩ
November 2013
Features
• RDS(on) = 61 mΩ ( yp.) @ VGS = 10 V, ID = 12 A
• RDS(on) = 64 mΩ (Typ.) @ VGS = 5 V, ID = 12 A
• Low Gate Charge (Typ. 22.2 nC)
• Low Crss (Typ. 42 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchld Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance and maintain superior
switching performance.
Application
• Consumer Appliances
• LED TV and Monitor
• Synchronous Rectification
• Uninterruptible Power Supply
• Micro Solar Inverter
D
G
S
D
D-PAK
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD850N10L
100
±20
15.7
11.1
63
41
6.0
50
0.33
-55 to +175
300
FDD850N10L
3.0
87
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. C1
1
www.fairchildsemi.com

FDD850N10L Datasheet
Package Marking and Ordering Information
Part Number
FDD850N10L
Top Mark
FDD850N10L
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 80 V, VGS = 0 V
VDS = 80 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 12 A
VGS = 5 V, ID = 12 A
VDS = 10 V, ID = 15.7 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VGS = 10 V
VGS = 5 V
VDS = 80 V,
ID = 15.7 A
Switching Characteristics
td(on)
tr
td(off)
tf
ESR
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Equivalent Series Resistance (G-S)
VDD = 50 V, ID = 15.7 A,
VGS = 5 V, RG = 4.7 Ω
f = 1 MHz
(Note 4)
Min.
100
-
-
-
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
-
61
64
31
1100
80
42
22.2
12.3
3.0
5.7
17
21
27
8
1.75
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 12 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, VDS = 80 V, ISD = 15.7 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1 mH, IAS = 9.1 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 15.7 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
38
50
Quantity
2500 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
2.5 V
75 mΩ
96 mΩ
-S
1465
105
-
28.9
16.0
-
-
pF
pF
pF
nC
nC
nC
nC
44 ns
52 ns
64 ns
26 ns
-Ω
15.7 A
63 A
1.3 V
- ns
- nC
©2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. C1
2
www.fairchildsemi.com


Features Datasheet pdf FDD850N10L — N-Channel PowerTrench® M OSFET FDD850N10L N-Channel PowerTrench ® MOSFET 100 V, 15.7 A, 75 mΩ Novemb er 2013 Features • RDS(on) = 61 mΩ ( yp.) @ VGS = 10 V, ID = 12 A • RDS( on) = 64 mΩ (Typ.) @ VGS = 5 V, ID = 1 2 A • Low Gate Charge (Typ. 22.2 nC) • Low Crss (Typ. 42 pF) • Fast Swit ching • 100% Avalanche Tested • Imp roved dv/dt Capability • RoHS Complia nt Description This N-Channel MOSFET i s produced using Fairchld Semiconductor ’s advanced PowerTrench® process tha t has been tailored to minimize the on- state resistance and maintain superior switching performance. Application • Consumer Appliances • LED TV and Moni tor • Synchronous Rectification • U ninterruptible Power Supply • Micro S olar Inverter D G S D D-PAK G MOSF ET Maximum Ratings TC = 25oC unless oth erwise noted. S Symbol VDSS VGSS ID I DM EAS dv/dt PD Parameter Drain to So urce Voltage Gate to Source Voltage Dr ain Current Drain Current - Continuous (TC = 25oC) - Continuou.
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