N-Channel MOSFET. PB210BC Datasheet

PB210BC MOSFET. Datasheet pdf. Equivalent

Part PB210BC
Description N-Channel MOSFET
Feature PB210BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 240mΩ @VGS = 10.
Manufacture UNIKC
Datasheet
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PB210BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PB210BC Datasheet
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PB210BC
PB210BC
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
240mΩ @VGS = 10V
ID
2.2A
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
ID
IDM
2.2
1.8
8
Avalanche Current
IAS 6
Avalanche Energy
L = 1mH
EAS
18
Power Dissipation
TA = 25 °C
TA = 100 °C
PD
2.5
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
50
Junction-to-Case
RqJC
10
1Pulse width limited by maximum junction temperature.
2 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2015/5/26



PB210BC
PB210BC
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
100
1 1.5
2
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 5V, ID = 1A
VGS = 10V, ID = 2A
VDS = 5V, ID = 2A
192 250
185 240
7
S
DYNAMIC
Input Capacitance
Ciss
605
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
44 pF
Reverse Transfer Capacitance
Crss
27
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 50V,ID = 2A
VDD = 50V,
ID@ 2A, VGS = 10V, RGEN = 6Ω
15
9
nC
1.6
4.6
17
22
nS
26
27
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current2
IS
Forward Voltage1
VSD IF = 2A, VGS = 0V
1.7 A
1.4 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 2A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
30 nS
30 nC
2Independent of operating temperature.
REV 1.0
2 2015/5/26





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