N-Channel MOSFET. P2806BV Datasheet

P2806BV MOSFET. Datasheet pdf. Equivalent

Part P2806BV
Description N-Channel MOSFET
Feature P2806BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 28mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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P2806BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2806BV Datasheet
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P2806BV
P2806BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 28mΩ @VGS = 10V
ID
7A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
7
5
35
Avalanche Current
IAS 28
Avalanche Energy
L =0.1mH
EAS
41
Power Dissipation
TA= 25 °C
TA =70 °C
PD
2.5
1.6
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL MAXIMUM UNITS
50 °C / W
REV 1.0
1 2014/9/16



P2806BV
P2806BV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
60
1
1.5 3
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 5.3A
VGS = 10V, ID = 6A
30 35
22 28
On-State Drain Current1
Forward Transconductance1
ID(ON)
gfs
VDS =5V, VGS = 10V
VDS = 5V, ID = 6A
DYNAMIC
35
8
A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V,VDS = 0V,f = 1MHz
1520
158
90
1.3
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS = 0.5V(BR)DSS,
ID = 6A,VGS = 10V
29
15 nC
5
Gate-Drain Charge2
Qgd
8
Turn-On Delay Time2
td(on)
20
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 30V,
ID @ 6A,VGS = 10V, RGEN = 6Ω
22
35
nS
Fall Time2
tf
24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
1.9 A
Forward Voltage1
VSD IF = 6A, VGS = 0V
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 6A, dl/dt = 100A / μS
26 nS
22 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2014/9/16





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