N-Channel MOSFET. P2806HV Datasheet

P2806HV MOSFET. Datasheet pdf. Equivalent

Part P2806HV
Description N-Channel MOSFET
Feature P2806HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 28mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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P2806HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2806HV Datasheet
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P2806HV
P2806HV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 28mΩ @VGS = 10V
ID
6A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
6
5
30
Avalanche Current
IAS 30
Avalanche Energy
L = 0.1mH
EAS
44
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.28
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Lead
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJL
TYPICAL
MAXIMUM
62.5
25
UNITS
°C / W
Ver 1.0
1 2012/4/13



P2806HV
P2806HV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 48V, VGS = 0V , TJ = 70 °C
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 5.3A
VGS = 10V, ID = 6A
VDS = 5V, ID = 6A
60
1.0 1.5 3.0
±100
1
10
30
29 35
23 28
25
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
1290
154
Reverse Transfer Capacitance
Crss
102
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.7
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 6A
Qgd
27
7.5
5
Turn-On Delay Time2
td(on)
8
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 0.5V(BR)DSS, RL = 1.5Ω
ID @ 6A, VGS = 10V, RG = 5.6Ω
5
30
Fall Time2
tf
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 6A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 6A, dlF/dt = 100A / mS
40
48
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
1.5
1.3
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/13





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