P-Channel MOSFET. P5504EVG Datasheet

P5504EVG MOSFET. Datasheet pdf. Equivalent

Part P5504EVG
Description P-Channel MOSFET
Feature P5504EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 55mΩ @VGS = -1.
Manufacture UNIKC
Datasheet
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P5504EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P5504EVG Datasheet
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P5504EVG
P5504EVG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
55mΩ @VGS = -10V
ID
-6A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-6
-4.8
-20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
3.1
2
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Lead
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJL
RqJA
TYPICAL
MAXIMUM
25
40
UNITS
°C / W
Ver 1.0
1 2012/4/16



P5504EVG
P5504EVG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
VGS = -4.5V, ID = -4.5A
VGS = -10V, ID = -5.5A
VDS = -10V, ID = -5.5A
-40
-1 -1.5 -2.5
±250
1
10
-20
65 94
38 55
11
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -10V, f = 1MHz
690
310
Reverse Transfer Capacitance
Crss
75
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS,
ID = -5.5A, VGS = -10V
14
2.2
1.9
Turn-On Delay Time2
td(on)
6.7
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = -20V, ID = -1A, VGS = -10V,
RGS=6Ω
9.7
19.8
Fall Time2
tf
12.3
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -5.5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -5.5A, dlF/dt = 100A / mS
15.5
7.9
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
13.4
19.4
35.6
22.2
-1.3
-1
UNIT
V
nA
mA
A
mΩ
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16





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