DatasheetsPDF.com

PB210BV

Part Number	PB210BV
Manufacturer	UNIKC
Description	MOSFET
Published	Feb 3, 2017
Detailed Description	PB210BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 2.1A SOP-8 A...
Datasheet	PB210BV PDF File

Overview

PB210BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 2.
1A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TA = 25 °C TA = 70 °C ID IDM 2.
1 1.
7 17 Avalanche Current IAS 17 Avalanche Energy L =0.
1mH EAS 15.
4 Power Dissipation TA= 25 °C TA =70 °C PD 2.
3 1.
5 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction ...

Similar Datasheet

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)