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PB210HV

UNIKC
Part Number PB210HV
Manufacturer UNIKC
Description MOSFET
Published Feb 3, 2017
Detailed Description PB210HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 2A SOP-8...
Datasheet PDF File PB210HV PDF File

PB210HV
PB210HV

Overview
PB210HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 2A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 2 1.
6 18 Avalanche Current IAS 18 Avalanche Energy L =0.
1mH EAS 16 Power Dissipation TA= 25 °C TA =70 °C PD 2 1.
3 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
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