MOSFET. P1003BK Datasheet

P1003BK MOSFET. Datasheet pdf. Equivalent

Part P1003BK
Description MOSFET
Feature P1003BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 10.5mΩ @VGS = 10V.
Manufacture UNIKC
Datasheet
Download P1003BK Datasheet

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P1003BK
P1003BK
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 10.5mΩ @VGS = 10V
ID
49A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
TC = 25 °C
(Package Limited)
TC = 25 °C(Silicon Limited)
ID
30
49
Pulsed Drain Current1
TC = 100 °C
31
IDM 120
Continuous Drain Current
TA = 25 °C
TA = 70 °C
13
ID 10
Avalanche Current
IAS 28
Avalanche Energy
L = 0.1mH
EAS 40
Power Dissipation
TC = 25 °C
TC = 100 °C
35
PD 14
Power Dissipation
TA = 25 °C
TA = 70 °C
2.5
PD 1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Steady-State
Junction-to-Ambient
Steady-State
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
3.5
°C / W
50
Ver 1.0
1 2012/6/7



P1003BK
P1003BK
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V ,
VDS = 20V, VGS = 0V , TJ = 55 °C
VGS = 4.5V, ID = 15A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
30
1
1.5 3
V
±100 nA
1
mA
10
11 14.5
8.6 10.5
42 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss VGS = 0V, VDS = 15V, f = 1MHz
Crss
Rg VGS = 0V, VDS = 0V, f = 1MHz
778
312 pF
79
1.7 Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS=10V
VGS=4.5V
Qgs
VDS = 0.5V(BR)DSS, ID = 20A,
VGS = 10V
15
8
nC
2.8
Gate-Drain Charge2
Qgd
3.6
Turn-On Delay Time2
td(on)
17
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,ID @ 20A, VGS=20V,
RGEN= 6Ω
10
nS
33
Fall Time2
tf
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
26 A
Forward Voltage1
VSD IF = 20A, VGS = 0V
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20 A, dlF/dt = 100A /μS
24 nS
13 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
Ver 1.0
2 2012/6/7





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