MOSFET. PB210BI Datasheet

PB210BI MOSFET. Datasheet pdf. Equivalent

Part PB210BI
Description MOSFET
Feature PB210BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10.
Manufacture UNIKC
Datasheet
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PB210BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PB210BI Datasheet
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PB210BI
PB210BI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
230mΩ @VGS = 10V
ID
9A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
ID
IDM
9
6
14
Avalanche Current
IAS 16
Avalanche Energy
L = 0.1 mH
EAS
14
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
36
14
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
3.5 °C / W
REV 1.0
1 2014-3-6



PB210BI
PB210BI
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 70°C
VDS = 5V, VGS = 5V
100
1 1.4
2
V
±100 nA
1
mA
10
14 A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 5V, ID = 6A
VGS =10V, ID = 6A
VDS = 5V, ID = 6A
213 240
204 230
15 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 6A
VDS = 0.5V(BR)DSS, ID @ 6A,
VGS = 10V, RGEN =6Ω
647
46 pF
35
1.8 Ω
15.6
2 nC
5
20
20
nS
27
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
9A
Forward Voltage1
VSD IF = 6A, VGS = 0V
1.4 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 6A, dlF/dt = 100A / μS
40 nS
53 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2014-3-6





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