Power Amplifier. SST12LP19E Datasheet

SST12LP19E Amplifier. Datasheet pdf. Equivalent

Part SST12LP19E
Description High-Efficiency Power Amplifier
Feature 2.4 GHz High-Gain, High-Efficiency Power Amplifier SST12LP19E Data Sheet SST12LP19E is a versatile p.
Manufacture Microchip
Datasheet
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2.4 GHz High-Gain, High-Efficiency Power Amplifier SST12LP19 SST12LP19E Datasheet
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SST12LP19E
2.4 GHz High-Gain, High-Efficiency Power Amplifier
SST12LP19E
Data Sheet
SST12LP19E is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. SST12LP19E is a 2.4 GHz fully-integrated, high-power,
high-gain Power Amplifier module designed in compliance with IEEE 802.11b/g/n
and 256 QAM applications. For WLAN applications, it typically provides 25 dB gain
with 34% power-added efficiency. SST12LP19E has excellent linearity while meet-
ing 802.11g spectrum mask at 23.5 dBm and 802.11b spectrum mask at 23 dBm.
This power amplifier includes a power detector with dB-wise linear voltage output
and features easy board-level usage along with high-speed power-up/down control
through a single combined reference voltage pin. SST12LP19E and is offered in 6-
contact XSON, 8-contact XSON, and 6-contact X2SON packages. Due to its small
package size and high efficiency, this power amplifier is also well suited for ZigBee®
and Bluetooth® applications.
Features
• Excellent RF Stability with Moderate Gain:
– Typically 25 dB gain across 2.4 – 2.5 GHz
• High linear output power:
– >26 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 6
– Meets 802.11g OFDM ACPR requirement up to 23.5
dBm
– 3% EVM up to 18 dBm (high-efficiency configuration) or
~3% EVM up to 19.5 dBm (high-power configuration) for
54 Mbps 802.11g signal
– 2.5% EVM up to 16.5 dBm for MCS7–20 MHz band-
width
– 1.8% EVM up to 16 dBm for MCS9–40 MHz bandwidth
– Meets 802.11b ACPR requirement up to 23 dBm
• High power-added efficiency/Low operating cur-
rent for 802.11b/g/n applications
– ~34%/200 mA @ POUT = 23.5 dBm for 802.11g
– ~31%/195 mA @ POUT = 23 dBm for 802.11b
• Single-pin low IREF power-up/down control
– IREF <2 mA
• Low idle current
– ~40-65 mA ICQ, depending on package type and config-
uration.
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• Low Shut-down Current (~2 µA)
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Excellent On-chip power detection
– 20 dB dynamic range on-chip power detection
– dB-wise linear output voltage
– Temperature stable and load insensitive
• Simple input/output matching
• Packages available
– 8-contact XSON – 2mm x 2mm x 0.5 mm max
– 6-contact XSON – 1.5mm x 1.5mm x 0.5 mm max
– 6-contact X2SON – 1.5mm x 1.5mm x 0.4mm max
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n/256 QAM)
• Bluetooth
• ZigBee
• Cordless phones
• 2.4 GHz ISM wireless equipment
© 2014
www.microchip.com
DS70005041D
08/14



SST12LP19E
2.4 GHz High-Gain, High-Efficiency Power Amplifier
SST12LP19E
Product Description
Data Sheet
SST12LP19E is a versatile, 2.4 GHz power amplifier based on the highly-reliable InGaP/GaAs HBT technology.
While it is designed to meet the high-linearity requirement of IEEE 802.11b/g/n/256 QAM, the power amplifier’s
high efficiency also makes it useful for Bluetooth and ZigBee applications.
SST12LP19E can be easily configured for high-power applications with good power-added efficiency while
operating over the 2.4- 2.5 GHz frequency band. It typically provides 25 dB gain with 34% power-added effi-
ciency (PAE) @ POUT = 23.5 dBm for 802.11g and 31% PAE @ POUT = 23 dBm for 802.11b.
This device has excellent linearity, typically ~3% added EVM at 19.5 dBm output power which is essential for 54
Mbps 802.11g operation while meeting 802.11g spectrum mask at 23.5 dBm and 802.11b spectrum mask at
23 dBm.
SST12LP19E can also be easily configured for high-efficiency operation, typically 3% added EVM at 18 dBm
output power and 92 mA total power consumption for 54 Mbps 802.11g applications. It operates at 2.5% EM at
typically 16.5 dBm for MCS7-20 MHz and 1.8% EVM at 16 dBm for MCS9-40 MHz bandwidth. High-efficiency
operation is desirable in embedded applications, such as in hand-held units, where SST12LP19E can provide
25 dB gain and meet 802.11b/g/n/256 QAM spectrum mask at 22 dBm output power with 34% PAE.
This power amplifier also features easy board-level usage along with high-speed power-up/down control
through a single combined reference voltage pin. Ultra-low reference current (total IREF ~2 mA) makes the
SST12LP19E controllable by an on/off switching signal directly from the baseband chip. These features cou-
pled with low operating current make the SST12LP19E ideal for the final stage power amplification in battery-
powered 802.11b/g/n/256 QAM WLAN transmitter applications.
SST12LP19E has an excellent on-chip, single-ended power detector, which features wide-range (>20 dB) with
dB-wise linear output voltage. The excellent on-chip power detector provides a reliable solution to board-
level power control.
The SST12LP19E is offered in 8-contact XSON, 6-contact XSON, and 6-contact X2SON packages. See Fig-
ure 3 for pin assignments and Tables 1 and 2 for pin descriptions.
© 2014
DS70005041D
08/14
2





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