Effect Transistor. P1203BVA Datasheet

P1203BVA Transistor. Datasheet pdf. Equivalent

Part P1203BVA
Description N-Channel Field Effect Transistor
Feature NIKO-SEM N-Channel Logic Level Enhancement P1203BVA Mode Field Effect Transistor SOP-8 Halogen-F.
Manufacture NIKO-SEM
Datasheet
Download P1203BVA Datasheet

NIKO-SEM N-Channel Logic Level Enhancement P1203BVA Mode F P1203BVA Datasheet
Recommendation Recommendation Datasheet P1203BVA Datasheet




P1203BVA
NIKO-SEM
N-Channel Logic Level Enhancement P1203BVA
Mode Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ
ID
11A
D
G
S
4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
LIMITS
±20
11
7
40
28
40
2.5
1
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
MIN
LIMITS
TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TC = 125 °C
VDS = 10V, VGS = 10V
VGS = 4.5V, ID = 11A
VGS = 10V, ID = 11A
VDS = 5V ID = 11A
30
1.2
40
1.5 3
V
±100 nA
1
µA
10
A
14 17.5
mΩ
9.6 12
40 S
REV 0.93
Sep-13-2011
1



P1203BVA
NIKO-SEM
N-Channel Logic Level Enhancement P1203BVA
Mode Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss VGS = 0V, VDS = 15V, f = 1MHz
Crss
RG VGS = 0V, f = 1MHz
1100
170
108
1.8 2.7
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
(VGS=10V)
Qg
(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, ID = 11A
VDS = 15V, ID 11A,
VGS = 10V,RGEN = 6Ω
21
10
3.9
5.3
12
33
51
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 11A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr IF = 11 A, dlF/dt = 100A / µS
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
18
8
1.9
1.3
pF
Ω
nC
nS
A
V
nS
nC
REV 0.93
Sep-13-2011
2





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