2SC2525. C2525 Datasheet

C2525 2SC2525. Datasheet pdf. Equivalent


Part C2525
Description 2SC2525
Feature SavantIC Semiconductor wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors DESCRIPTION ·With MT-200 pack.
Manufacture SavantIC
Datasheet
Download C2525 Datasheet


SavantIC Semiconductor wSwiwl.iDcatoaSnheeNt4PU.cNomPower Tr C2525 Datasheet
Recommendation Recommendation Datasheet C2525 Datasheet




C2525
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With MT-200 package
·Complement to type 2SA1075
·Excellent safe operating area
·Ultra fast switching speed
APPLICATIONS
·Suited for high frequency power amplifiers,
audio power amplifiers,switching regulators
and DC-DC converters applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC2525
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
120
120
7
12
120
150
-65~150
UNIT
V
V
V
A
W



C2525
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2525
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA; RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=50µA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50µA; IC=0
VCEsat
VBE
ICBO
IEBO
Collector-emitter saturation voltage IC=5 A;IB=0.5 A
Base-emitter voltage
IC=5A ; VCE=5V
Collector cut-off current
VCB=120V; IE=0
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
fT Transition frequency
COB Output capacitance
Switching times
IC=7A ; VCE=5V
IC=1A ; VCB=10V,f=1MHz
IE=0; VCB=10V;f=1MHz
tr Rise time
ts Storage time
tf Fall time
IC=7.5A; RL=4D
IB1=-IB2=0.75A
MIN TYP. MAX UNIT
120 V
120 V
7V
0.7 1.8
V
1.25 1.7
V
50 µA
50 µA
60 200
40
50 80
MHz
180 300 pF
0.3 µs
1.3 µs
0.2 µs
2







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