2N2906A Transistor Datasheet

2N2906A Datasheet, PDF, Equivalent


Part Number

2N2906A

Description

High Speed Switching Transistor

Manufacture

Multicomp

Total Page 3 Pages
Datasheet
Download 2N2906A Datasheet


2N2906A
High Speed Switching Transistor
Features:
•  PNP silicon planar switching transistors
•  Fast switching devices exhibiting short turn-off and low
saturation voltage characteristics
•  Switching and linear application DC and VHF amplifier
applications
Absolute Maximum Ratings
Description
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta = 25ºC
Derate above 25ºC
Power Dissipation @ Tc = 25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
Symbol
Vceo
Vcbo
Vebo
Ic
Pd
Pd
Tj, Tstg
Value
60
5
600
400
2.28
1.8
10.3
-55 to +175
Unit
V
mA
mW
mW/ ºC
W
mW/ ºC
ºC
Pin Configuration
1. Emitter
2. Base
3. Collector
Electrical Characteristics (Ta = 25ºC unless specified otherwise)
Description
Symbol
Test Condition
Collector Emitter Voltage
*Vceo
Ic=10mA, Ib=0
Collector Base Voltage
Vcbo
Ic=10µA, Ie=0
Emitter Base Voltage
Vebo
Ie=10µA, Ic=0
Collector Cut Off Current
Icbo
Icex
Vcb = 50V, Ie = 0
Ta = 150°C
Vcb = 50V, Ie = 0
Vce=30V, Vbe=0.5V
Base Current
Ib Vce=30V, Vbe=0.5V
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Vce(Sat)*
Vbe(Sat)*
Ic = 150mA, Ib = 15mA
Ic = 500mA, Ib = 50mA
Ic = 150mA, Ib = 15mA
Ic = 500mA, Ib = 50mA
Min.
60
5
-
-
-
-
-
-
Max,
-
-
-
10
10
50
50
1.3
2.6
1.3
2.6
Unit
V
nA
μA
nA
nA
V
V
www.element14.com
www.farnell.com
www.newark.com
Page <1>
30/01/15 V1.0

2N2906A
High Speed Switching Transistor
Description
Symbol
Test Condition
DC Current Gain
hFE
*Pulse Test : Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Ic = 0.1mA, Vce = 10V
Ic = 1 mA, Vce = 10V
Ic = 10 mA, Vce = 10V
Ic = 150 mA, Vce = 10V*
Ic = 500 mA, Vce = 10V*
Min.
2N2906
>20
>25
>35
40 - 120
>20
Max,
2N2907
>35
>50
>75
100 - 300
>30
Unit
-
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Dynamic Characteristics
Transition Frequency
Output Capacitance
Input Capacitance
Switching Time
Delay Time
Rise Time
Turn on Time
Storage time
Fall Time
Turn Off Time
ft**
Cob
Cib
td
tr
ton
ts
tf
toff
Ic = 50mA, Vce = 20V, f = 100MHz
Vcb = 10V, Ie = 0, f = 100kHz
Vbe = 2V, Ic = 0, f = 100kHz
Ic = 150mA, IB1 = 15 mA
Vcc = 30V
-
Ic = 150mA, IB1 = IB2 = 15mA
Vcc = 6V
-
** ft is defined as the frequency at which \hfe/ extrapolates to unity
Value
Min.
Max.
200 -
-8
- 30
- 10
- 40
- 45
- 80
- 30
- 100
Unit
MHz
pF
ns
Specification Table
Vceo
Maximum
(V)
Ic
Maximum
(A)
Vce(sat)
Maximum
(V)
at Ic = 150mA
60 0.6
0.4
toff
Maximum
(ns)
100
hfe
Minimum
at Ic = 150mA
Pd
at Ta = 25°C
(mW)
40 400
Package
and
Pin Out
TO-18
Part Number
2N2906A
2N2907A
www.element14.com
www.farnell.com
www.newark.com
Page <2>
30/01/15 V1.0


Features High Speed Switching Transistor Feature s: •  PNP silicon planar switching transistors •  Fast switching devi ces exhibiting short turn-off and low s aturation voltage characteristics • Switching and linear application DC and VHF amplifier applications Absolut e Maximum Ratings Description Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta = 2 5ºC Derate above 25ºC Power Dissipati on @ Tc = 25ºC Derate Above 25ºC Ope rating and Storage Junction Temperature Range Symbol Vceo Vcbo Vebo Ic Pd Pd Tj, Tstg Value 60 5 600 400 2.28 1.8 1 0.3 -55 to +175 Unit V mA mW mW/ ºC W mW/ ºC ºC Pin Configuration 1. Emit ter 2. Base 3. Collector Electrical Ch aracteristics (Ta = 25ºC unless specif ied otherwise) Description Symbol Te st Condition Collector Emitter Voltage *Vceo Ic=10mA, Ib=0 Collector Base Voltage Vcbo Ic=10µA, Ie=0 Emitter Base Voltage Vebo Ie=10µA, Ic=0 Collector Cut Off Current .
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