2N2906 TRANSISTORS Datasheet

2N2906 Datasheet, PDF, Equivalent


Part Number

2N2906

Description

PNP SILICON PLANAR SWITCHING TRANSISTORS

Manufacture

CDIL

Total Page 4 Pages
Datasheet
Download 2N2906 Datasheet


2N2906
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR SWITCHING TRANSISTORS
2N2906 2N2907
TO-18
Metal Can Package
Switching and Linear Application
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
VALUE
40
60
5
600
400
2.28
1.8
10.3
- 65 to +200
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
*VCEO
IC=10mA, IB=0
Collector Base Voltage
VCBO
IC=10µA, IE=0
Emitter Base Voltage
VEBO
IE=10µA, IC=0
Collector Cut Off Current
ICEX VCE=30V, VBE=0.5V
Collector Cut Off Current
ICBO
VCB=50V, IE=0
VCB=50V, IE=0,
Ta=150ºC
Base Current
IB VCE=30V, VBE=0.5V
MIN
40
60
5
UNIT
V
V
V
mA
mW
mW/ ºC
W
mW/ ºC
ºC
TYP MAX
50
20
20
50
UNIT
V
V
V
nA
nA
µA
nA
DC Current Gain
hFE
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
2N2906_2907Rev010303E
IC=0.1mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
*IC=150mA, VCE=10V
*IC=500mA, VCE=10V
2N2906
>20
>25
>35
40 - 120
>20
2N2907
>35
>50
>75
100 - 300
>30
Continental Device India Limited
Data Sheet
Page 1 of 4

2N2906
PNP SILICON PLANAR SWITCHING TRANSISTORS
2N2906 2N2907
TO-18
Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
SMALL SIGNAL CHARACTERISTICS
DESCRIPTION
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Output Capacitance
SYMBOL TEST CONDITION
MIN TYP MAX UNIT
*VCE (sat) IC=150mA, IB=15mA
0.4 V
IC=500mA, IB=50mA
1.6 V
*VBE (sat) IC=150mA, IB=15mA
1.3 V
IC=500mA, IB=50mA
2.6 V
**fT
IC=50mA, VCE=20V,
f=100MHz
200
MHz
Cobo
VCB=10V, IE=0,
f=100KHz
8.0 pF
Cibo
VBE=2V, IC=0,
f=100KHz
30 pF
SWITCHING TIME
DESCRIPTION
Delay Time
Rise Time
Turn On Time
Storage Time
Fall Time
Turn Off Time
SYMBOL TEST CONDITION
MIN TYP MAX UNIT
td
tr
ton
IC=150mA, IB1=15mA,
VCC=30V
10 ns
40 ns
45 ns
ts
tf
toff
IC=150mA, IB1=
IB2=15mA, VCC=6V
80 ns
30 ns
100 ns
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
** fT is defined as the frequency at which IhfeI extrapolates to unity
2N2906_2907Rev010303E
Continental Device India Limited
Data Sheet
Page 2 of 4


Features Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company PNP SILICON PLANAR SWITCHIN G TRANSISTORS 2N2906 2N2907 TO-18 Meta l Can Package Switching and Linear App lication ABSOLUTE MAXIMUM RATINGS DESCR IPTION Collector Emitter Voltage Collec tor Base Voltage Emitter Base Voltage C ollector Current Continuous Power Dissi pation @ Ta=25ºC Derate Above 25ºC Po wer Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction T emperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 40 60 5 600 4 00 2.28 1.8 10.3 - 65 to +200 ELECTRIC AL CHARACTERISTICS (Ta=25ºC unless spe cified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Volt age *VCEO IC=10mA, IB=0 Collector Ba se Voltage VCBO IC=10µA, IE=0 Emitt er Base Voltage VEBO IE=10µA, IC=0 Collector Cut Off Current ICEX VCE=30V , VBE=0.5V Collector Cut Off Current ICBO VCB=50V, IE=0 VCB=50V, IE=0, Ta= 150ºC Base Current IB VCE=30V, VBE=0.5V MIN 40 60 5 UNIT V.
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