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2N6666

Part Number	2N6666
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Darlington Power Transistor
Published	Jun 29, 2017
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2N6666 DESCRIPTION ·High ...
Datasheet	2N6666 PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2N6666 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.
0V(Max)@ IC= -3A ·Complement to Type 2N6386 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -15 A IBB Base Current-DC Coll...

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