2N5038 TRANSISTORS Datasheet

2N5038 Datasheet, PDF, Equivalent


Part Number

2N5038

Description

SILICON NPN POWER TRANSISTORS

Manufacture

Central Semiconductor

Total Page 3 Pages
Datasheet
Download 2N5038 Datasheet


2N5038
2N5038
2N5039
SILICON
NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5038 and 2N5039
are silicon NPN power transistors designed for power
amplifier and power oscillator applications where high
current, high voltage, and fast switching speeds are
required.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEX
VCER
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
JC
2N5038
150
2N5039
120
150 120
110 95
90 75
7.0
20
30
5.0
140
-65 to +200
1.25
UNITS
V
V
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N5038
SYMBOL TEST CONDITIONS
MIN MAX
ICEV
ICEV
ICEV
ICEV
ICEO
ICEO
IEBO
IEBO
BVCEX
BVCER
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
VBE(ON)
hFE
hFE
hFE
VCE=140V, VBE=1.5V
VCE=110V, VBE=1.5V
VCE=100V, VBE=1.5V, TC=150°C
VCE=85V, VBE=1.5V, TC=150°C
VCE=70V
VCE=55V
VEB=5.0V
VEB=7.0V
IC=200mA, VBE=1.5V
IC=200mA, RBE≤50Ω
IC=200mA
IE=50mA
IC=12A, IB=1.2A
IC=10A, IB=1.0A
IC=20A, IB=5.0A
IC=20A, IB=5.0A
VCE=5.0V, IC=12A
VCE=5.0V, IC=10A
VCE=5.0V, IC=2.0A
VCE=5.0V, IC=10A
VCE=5.0V, IC=12A
- 50
--
- 10
--
- 20
--
- 5.0
- 50
150 -
110 -
90 -
7.0 -
- 1.0
--
- 2.5
- 3.3
- 1.8
--
50 250
--
20 100
2N5039
MIN MAX
--
- 50
--
- 10
--
- 20
- 15
- 50
120 -
95 -
75 -
7.0 -
--
- 1.0
- 2.5
- 3.3
--
- 1.8
30 250
20 100
--
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
R1 (17-March 2015)

2N5038
2N5038
2N5039
SILICON
NPN POWER TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
2N5038
2N5039
SYMBOL TEST CONDITIONS
MIN MAX
MIN MAX
fT
VCE=10V, IC=2.0A, f=5.0MHz
60 -
60 -
Cob VCB=10V, IE=0, f=1.0MHz
- 400
- 400
Is/b VCE=28V, t=1.0s
5.0 -
5.0 -
Is/b VCE=45V, t=1.0s
0.9 -
0.9 -
tr
VCC=30V, IC=12A, IB1=IB2=1.2A
- 0.5
--
tr
VCC=30V, IC=10A, IB1=IB2=1.0A
--
- 0.5
ts
VCC=30V, IC=12A, IB1=IB2=1.2A
- 1.5
--
ts
VCC=30V, IC=10A, IB1=IB2=1.0A
--
- 1.5
tf
VCC=30V, IC=12A, IB1=IB2=1.2A
- 0.5
--
tf
VCC=30V, IC=10A, IB1=IB2=1.0A
--
- 0.5
TO-3 CASE - MECHANICAL OUTLINE
UNITS
MHz
pF
A
A
μs
μs
μs
μs
μs
μs
w w w. c e n t r a l s e m i . c o m
R2 LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R1 (17-March 2015)


Features 2N5038 2N5039 SILICON NPN POWER TRANSIST ORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCT OR 2N5038 and 2N5039 are silicon NPN po wer transistors designed for power ampl ifier and power oscillator applications where high current, high voltage, and fast switching speeds are required. MAR KING: FULL PART NUMBER TO-3 CASE MAXI MUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Colle ctor-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Curre nt Continuous Base Current Power Dissip ation Operating and Storage Junction Te mperature Thermal Resistance SYMBOL VC BO VCEX VCER VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N5038 150 2N5039 120 15 0 120 110 95 90 75 7.0 20 30 5.0 140 -65 to +200 1.25 UNITS V V V V V A A A W °C °C/W ELECTRICAL CHARACT ERISTICS: (TC=25°C unless otherwise no ted) 2N5038 SYMBOL TEST CONDITIONS MI N MAX ICEV ICEV ICEV ICEV ICEO ICEO IEBO IEBO BVCEX BVCER BVCE.
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