IRF840
Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A
D
G
N Channel
S Symbol
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Drain to Source Breakdown Voltage Drain to Source Leakage Current
Gate to Source Leakage Current Gate Threshold Voltage
V(BR)DSS VGS = 0 VDC, ID = 250µA
IDSS
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