N-Channel MOSFET. AO3420 Datasheet

AO3420 MOSFET. Datasheet pdf. Equivalent


Part AO3420
Description N-Channel MOSFET
Feature SMD Type N-Channel MOSFET AO3420 (KO3420) MOSFET ■ Features ● VDS (V) = 20V ● ID = 6 A (VGS = 10V.
Manufacture Kexin
Datasheet
Download AO3420 Datasheet


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AO3420
SMD Type
N-Channel MOSFET
AO3420 (KO3420)
MOSFET
Features
VDS (V) = 20V
ID = 6 A (VGS = 10V)
RDS(ON) 24mΩ (VGS = 10V)
RDS(ON) 27mΩ (VGS = 4.5V)
RDS(ON) 42mΩ (VGS = 2.5V)
RDS(ON) 55mΩ (VGS = 1.8V)
D
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
G
S
Absolute Maximum Ratings Ta = 25
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range
TA=25
TA=70
TA=25
TA=70
t 10s
Steady-State
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJL
TJ
Tstg
Rating
20
±12
6
5
30
1.4
0.9
90
125
80
150
-55 to 150
Unit
V
A
W
/W
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AO3420
SMD Type
MOSFET
N-Channel MOSFET
AO3420 (KO3420)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
Test Conditions
ID=250μA, VGS=0V
VDS=20V, VGS=0V
VDS=20V, VGS=0V, TJ=55
VDS=0V, VGS=±12V
VDS=VGS , ID=250μA
VGS=10V, ID=6A
VGS=10V, ID=6A TJ=125
VGS=4.5V, ID=5A
Min
20
0.4
VGS=2.5V, ID=4A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
gFS
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
IS
VSD
VGS=1.8V, ID=2A
VDS=5V, ID=6A
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=10V, ID=6A
420
65
45
0.8
VGS=10V, VDS=10V, RL=1.7Ω,RG=3Ω
IF= 6A, dI/dt= 100A/us
IS=1A,VGS=0V
* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
Typ Max Unit
V
1
uA
5
±100 nA
1.1 V
24
35
27 mΩ
42
55
25 S
630
125 pF
105
2.6 Ω
12.5
6
nC
1
2
3
7.5
20 ns
6
14
6 nC
2A
1V
Marking
Marking
AN**
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