NPN Silicon Epitaxial Transistor
FEATURES
z Low Collector Saturation Voltage: VCE(sat)<0.4V( IC=1.0A,IB =100mA)
z Excellent DC Current Gain Linearity: hFE=140Typ.( VCE=1.0V, IC=1.0A)
z Complements to PNP type 2SB798
Pb
Lead-free
Production specification
2SD999
SOT-89
ORDERING INFORMATION
Type No.
Marking
2SD999
CM/CL/CK
Package Code SOT-89
MAXIMUM ...
