| Feature |
Medium Power Transistor
FEATURES
z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A)
z Complements the 2SD1862.
APPLICATIONS
z Epitaxial planar type. z PNP silicon transistor.
Pb
Lead-free
Production specification
2SB1240
TO-251
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
-40 V
VCEO
Collector-Emitter Voltage
-32 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current
-2 A
ICP Collector Power Dissipation
-3 A
PC Collector Power Dissipation
1.0 W
Tj ,Tstg
Junction and Storage temper. |
