NPN transistor. MJE13001E1 Datasheet

MJE13001E1 transistor. Datasheet pdf. Equivalent

Part MJE13001E1
Description Silicon NPN transistor
Feature MJE13001E1 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-.
Manufacture BLUE ROCKET ELECTRONICS
Datasheet
Download MJE13001E1 Datasheet

MJE13001E1 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-9 MJE13001E1 Datasheet
Recommendation Recommendation Datasheet MJE13001E1 Datasheet





MJE13001E1
MJE13001E1
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.

特征 / Features
耐压高,快速转换。
High Voltage Capability High Speed Switching.
用途 / Applications
主要用于节能灯电路。
High frequency electronic lighting ballast applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1 23
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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MJE13001E1
MJE13001E1
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
600
400
9.0
0.45
1.0
150
-55150
单位
Unit
V
V
V
A
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符号
Symbol
VCBO
VCEO
VEBO
Collector Cut-Off Current
ICBO
Collector cut-off current
ICEO
Emitter Base Cut-Off Current
IEBO
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE
VCE(sat)
Base to Emitter Saturation Voltage VBE(sat)
Transition Frequency
fT
Fall time
Storage time
tf
tf
测试条件
Test Conditions
IC=1mA
IE=0
IC=10mA IB=0
IE=1mA
VCB=600V
VCE=400V
VEB=9.0V
VCE=5.0V
IC=100mA
IC=100mA
VCE=10V
f=1.0MHz
VCE=5V
(UI9600)
IC=0
IE=0
IB=0
IC=0
IC=100mA
IB=20mA
IB=20mA
IC=50mA
IC=100mA
最小值 典型值 最大值 单位
Min Typ Max Unit
600 V
400 V
9.0 V
0.1 mA
0.1 mA
0.1 mA
10 40
0.5 V
1.2 V
5.0 MHz
0.6 μs
3.0 μs
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