Power Transistor. MJE13004 Datasheet

MJE13004 Transistor. Datasheet pdf. Equivalent

Part MJE13004
Description NPN Power Transistor
Feature NPN Power Transistor MJE13004 NPN Power Transistor Features  MJE13004 is designed for high–voltag.
Manufacture TAITRON
Datasheet
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MJE13004
NPN Power Transistor
MJE13004
NPN Power Transistor
Features
MJE13004 is designed for highvoltage, highspeed
power switching inductive circuits where fall time is critical.
RoHS Compliant
TO-220
Mechanical Data
Case:
Terminals:
Weight:
TO-220, Plastic Package
Solderable per MIL-STD-202, Method 208
0.08 ounces, 2.24 grams
Absolute Maximum Ratings (Tamb=25°C unless otherwise noted)
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
300 V
VCBO
Collector-Base Voltage
600 V
VEBO
Emitter-Base Voltage
9.0 V
IC Collector Current Continuous
4.0
A
ICM Collector Current Peak
8.0 A
IB Base Current Continuous
2.0 A
IBM Base Current Peak
4.0 A
IE Emitter Current Continuous 6.0 A
IEM Emitter Current Peak
12.0 A
PD
Power Dissipation Tc=25°C
Derate above 25°C
75 W
600 mW/°C
PD
Power Dissipation Ta=25°C
Derate above 25°C
2W
16 mW/°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. A/PQ
Page 1 of 5



MJE13004
NPN Power Transistor
MJE13004
Electrical Characteristics (Tamb=25°C unless otherwise noted)
Symbol
Parameter
Off Characteristics
VCEO(sus) * Collector- Emitter Sustaining Voltage
ICEO *
Collector Cut-off Current
IEBO *
Emitter Cut-off Current
On Characteristics
hFE1 *
hFE2 *
DC Current Gain
VCE(sat) * Collector-Emitter Saturation Voltage
VBE(sat) * Base-Emitter Saturation Voltage
Dynamic Characteristics
fT Current Gain Bandwidth Product
Cob Output Capacitance
Switching Characteristics Resistive Load
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
Min.
300
-
-
-
10
8
-
-
-
-
-
-
-
4.0
-
-
-
-
-
Typ. Max.
--
- 1.0
- 5.0
- 1.0
- 60
- 40
- 0.5
- 0.6
- 1.0
- 1.0
- 1.2
- 1.6
- 1.5
--
65 -
- 0.1
- 0.7
- 4.0
- 0.9
Unit Test Condition
V IC=10mA, IB=0
VCEV=300V, VBE(off)=1.5V
mA VCEV=300V,
VBE(off)=1.5V,Tc=100°C
mA VEB=9.0V,IC=0
VCE=5.0V, IC =1.0A
VCE=5.0V, IC =2.0A
IC =1.0A, IB =0.2A
IC =2.0A, IB =0.5A
V
IC =4.0A, IB =1.0A
IC =2.0A, IB =0.5A,
Tc=100°C
IC =1.0A, IB =0.2A
V IC =2.0A, IB =0.5A
IC =2.0A, IB =0.5A,
Tc=100°C
MHz
pF
IC=500mA,
VCE=10V, f=1.0MHz
VCB=10V, IE=0, f=0.1MHz
VCC=125V, IC=2.0A
us IB1=-IB2=0.4A,
tp=25µs, Duty Cycle≤1.0%
www.taitroncomponents.com
Rev. A/PQ
Page 2 of 5





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