MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BSS123LT1/D
TMOS FET Transistor
N–Channel
3 DRAIN 1 GATE 2 SOURCE
BSS123LT1
Motorola Preferred Device
®
MAXIMUM RATINGS
Rating Drain–Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Symbol VDSS VGS VGSM ID IDM
3 1 2
Value 100...
