Quad Array. VN0106N6 Datasheet

VN0106N6 Array. Datasheet pdf. Equivalent

VN0106N6 Datasheet
Recommendation VN0106N6 Datasheet
Part VN0106N6
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
Feature VN0106N6; (t) §upertex inc. VN01 04N6 / VN0104N7 VN01 06N6 / VN0106N7 Ordering Information BVoss I BVDGS 40V .
Manufacture Supertex
Datasheet
Download VN0106N6 Datasheet




Supertex VN0106N6
(t) §upertex inc. VN01 04N6 / VN0104N7
VN01 06N6 / VN0106N7
Ordering Information
BVoss I
BVDGS
40V
SOV
'14-pin Side Brazed Ceramic Dip.
N-Channel Enhancement-Mode
Vertical DMOS Power FETs Quad Array
ROS(ON)
(max)
30
30
Order Number I Package
14-Pin P-Dip
14-Pin C-Dlp'
VN0104NS
VN0104N7
VN010SNS
VN010SN7
Features
o 4 independent channels
o 4 electrically isolated die
o Commercial and Military versions available
o Freedom from secondary breakdown
o Low power drive requirement
o Low CISS and fast switching speeds
o High input impedance and high gain
Applications
o Motor control
o Convertors
o Amplifiers
o Switches
o Power supply circuits
o Driver (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Thermal Characteristics
Package
Plastic
DIP
10 continuous & lOR (single die)
0.5SA
Ceramic
DIP
0.7A
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideally suited to a wide
range of switching and amplifying applications w.here high break-
down voltage, high input impedance, low input capacilance, and
fast switching speeds are desired.
Electrical Characteristics
Refer to VN01 A Data Sheet for detailed characteristics.
.)
Pin Configuration
10 pulsed· & 10RM·
Power Dissipation @ Tc = 25°C*
0ja (OC/W)
°Jc(OC/W)
+ Pulse test 300 ~S pulse. 2% duty cycle.
t Total for pacl<age.
2.0A
2W
110
S2.5
2.0A
3W
83.3'
41.S
top view
14-pin DIP
10-27







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