BRIDGE RECTIFIER. B10S Datasheet

B10S RECTIFIER. Datasheet pdf. Equivalent


Part B10S
Description 0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Feature ® WON-TOP ELECTRONICS B1S – B10S 0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Pb Features .
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Datasheet
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B10S
®
WON-TOP ELECTRONICS
B1S – B10S
0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Pb
Features
Glass Passivated Die Construction
Low Forward Voltage Drop
High Reliability
High Surge Current Capability
Design for Surface Mount Application
Plastic Material – UL Flammability 94V-0
Recognized File # E157705
Mechanical Data
Case: MB-S, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Case
Weight: 0.12 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
L
B -+
~~
A
J
K
G
E
D
C
MB-S
Dim Min Max
A 4.50 4.90
B 3.60 4.00
C 0.15 0.35
D — 0.20
E — 7.00
G 0.70 1.10
J 2.30 2.70
K 2.20 2.60
L 0.56 0.84
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @TA = 40°C
Average Rectified Output Current (Note 2) @TA = 40°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage per diode
Peak Reverse Current
At Rated DC Blocking Voltage
@IF = 0.4A
@IF = 0.8A
@TA = 25°C
@TA = 125°C
Typical Junction Capacitance per diode (Note 3)
Thermal Resistance Junction to Ambient (Note 2)
Thermal Resistance Junction to Ambient (Note 1)
Thermal Resistance Junction to Lead (Note 2)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
B1S
100
70
B2S
200
140
B4S B6S
400 600
280 420
0.8
0.5
B8S B10S Unit
800 1000 V
560 700
V
A
IFSM
35 A
VFM
IRM
CJ
R JA
R JA
R JL
TJ, TSTG
1.0
1.1
5.0
500
13
134
76
20
-55 to +150
V
µA
pF
°C/W
°C
Note: 1. Mounted on aluminum substrate PCB with 1.3 x 1.3mm pad areas.
2. Mounted on glass epoxy PCB with 1.3 x 1.3mm pad areas.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1



B10S
B1S – B10S
1.0
Resistive or
Inductive Load
0.8
0.6
Al. Substrate PCB
0.4
Glass Epoxy PCB
0.2
0
0 15 30 45 60 75 90 105 120 135 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
50
Single Half-Sine-Wave
JEDEC Method
40
30
20
10
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
2.0
1.6
1.2
0.8
Sine-Wave
0.4 TJ = 150°C
0
0 0.2 0.4 0.6 0.8 1.0
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation
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2
®
WON-TOP ELECTRONICS
10
TJ = 150°C
1
TJ = 25°C
0.1
Pulse Width = 300µs
1% Duty Cycle
0.01
0.4 0.6 0.8 1.0 1.2 1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
1000
100 TA = 125°C
10
1.0
0.1 TA = 25°C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
25
TJ = 25°C
f = 1MHz
20
15
10
5
0
0.1
1 10
VR, DC REVERSE VOLTAGE (V)
Fig. 6 Typical Junction Capacitance
100
© Won-Top Electronics Co., Ltd.
Revision: September, 2012







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