DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Description
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
Darlington Complementary Silicon Power Transistors
These devices are designed for general purpose and low speed switching applications.
Features
High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 Collector−Emitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33...
