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BF999

Siemens Semiconductor Group
Part Number BF999
Manufacturer Siemens Semiconductor Group
Description Silicon N-Channel MOSFET Triode
Published Mar 23, 2005
Detailed Description Silicon N Channel MOSFET Triode q BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type ...
Datasheet PDF File BF999 PDF File

BF999
BF999

Overview
Silicon N Channel MOSFET Triode q BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type BF 999 Marking LB Ordering Code (tape and reel) Q62702-F1132 Pin Configuration 1 2 3 G D S Package1) SOT-23 Maximum Ratings Parameter Drain-source voltage Drain current Gate-source peak current Total power dissipation, TA ≤ 60 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - ambient 2) Rth JA ≤ Symbol VDS ID ± Values 20 30 10 200 Unit V mA IGSM Ptot Tstg Tch mW – 55 … + 150 ˚C 150 450 K/W 1) 2) For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.
7 mm × 0.
7 mm.
Semiconductor Group 1 07.
...


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