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Mode MOSFET. TDM3412 Datasheet |
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T echcode®
Dual
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3412 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
GENERAL FEATURES
Channel 1
RDS(ON) < 17.5mΩ @ VGS=4.5V
RDS(ON) < 10.8mΩ @ VGS=10V
Channel 2
RDS(ON) < 16mΩ @ VGS=4.5V
RDS(ON) < 10mΩ @ VGS=10V
High Power and current handling capability
ESD protection
Lead free product is available
Surface Mount Package
Application
PWM applications
Load switch
Power management
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage
VDS
Gate‐Source Voltage
VGS
Diode Continuous Forward Current
Is(TC=25℃)
Continuous Drain Current(note1)
ID(TC=25℃)
Pulse Drain Current Tested(note4)
IDP(TC=25℃)
Maximum Power Dissipation
PD(TC=25℃)
Continuous Drain Current
ID (TA=25℃)
ID (TA=70℃)
Pulse Drain Current Tested
IDP(TA=25℃)
Maximum Power Dissipation
PD(TA=25℃)
Thermal Resistance‐Junction to Ambient(note 5)
RθJA(t≤10s)
RθJA(Steady State)
Thermal Resistance‐Junction to Case
RθJC(Steady State)
Maximum Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
DATASHEET
TDM3412
Channel 1
30
+20
5
18
45
20
8.4
6.7
33.5
1.14
66
110
6
150
‐55 To 150
Channel 2
30
+20
5
18
45
20
9.1
7.3
36
1.13
60
100
6
Unit
V
V
A
A
A
W
A
A
W
℃/W
℃/W
℃
℃
July 15, 2015 Techcode Semiconductor Limited www.techcodesemi.com
1
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T echcode®
Dual
N-Channel
Enhancement
Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
DATASHEET
TDM3412
Parameter
Symbol Condition
OFF CHARACTERISTICS
Drain‐Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=24V,VGS=0V
Gate‐Body Leakage Current
IGSS VGS=±20V,VDS=0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain‐Source On‐State Resistance
RDS(ON)
VGS=10V, ID=10A
VGS=4.5V, ID=8A
DYNAMIC CHARACTERISTICS (Note3)
Gate Resistance
RG VGS=0V,VDS=0V,F=1MHz
Input Capacitance
Ciss VDS=15V,VGS=0V, F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (Note 3)
Turn‐on Delay Time
Turn‐on Rise Time
td(on)
tr
VDS=15V, RL=15 Ω, VGEN=10V,
RG=6 Ω ID=1A
Turn‐Off Delay Time
td(off)
Turn‐Off Fall Time
tf
Total Gate Charge
Qg VDS=15V,ID=10A,VGS=10V
Gate‐Source Charge
Qgs
Gate‐Drain Charge
Qgd
Body Diode Reverse Recovery Time
Trr
IDS=10A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge Qrr
DRAIN‐SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 2)
VSD VGS=0V,IS=5A
NOTES:
1. Max continuous current is limited by bonding wire.
2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
3. Guaranteed by design, not subject to production testing.
4. Pulse width is limited by max. junction temperature.
5. RθJA steady state t=999s
Channel1
Min Typ Max
Unit
30 ‐
‐ ‐
‐ ‐
‐
1
±10
V
μA
μA
1.4 1.8 2.5 V
‐ 9 10.8 mΩ
‐ 13.5 17.5 mΩ
‐ 1.35 2.5 Ω
‐ 450 600 PF
‐ 318 ‐
PF
‐ 22 ‐
PF
‐ 8.5 16 nS
‐ 10 18 nS
‐ 14 26 nS
‐ 10.6 19 nS
‐ 8 12 nC
‐ 1.6 ‐
nC
‐ 1.2 ‐
nC
‐ 20.5 ‐
nS
‐ 7.2 ‐
nC
‐ 0.8 1.1 V
July 15, 2015 Techcode Semiconductor Limited www.techcodesemi.com
2
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T echcode®
Dual
N-Channel
Enhancement
Mode
MOSFET
ELECTRICAL CHARACTERISTICS Cont.(TA=25℃unless otherwise noted)
DATASHEET
TDM3412
Parameter
Symbol Condition
OFF CHARACTERISTICS
Drain‐Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate‐Body Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Drain‐Source On‐State Resistance
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
DYNAMIC CHARACTERISTICS (Note3)
Gate Resistance
RG
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (Note 3)
Turn‐on Delay Time
td(on)
Turn‐on Rise Time
tr
Turn‐Off Delay Time
td(off)
Turn‐Off Fall Time
tf
Total Gate Charge
Qg
Gate‐Source Charge
Qgs
Gate‐Drain Charge
Qgd
Body Diode Reverse Recovery Time
Trr
Body Diode Reverse Recovery Charge Qrr
DRAIN‐SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 2)
VSD
VGS=0V ID=250μA
VDS=24V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=10A
VGS=4.5V, ID=8A
VGS=0V,VDS=0V,F=1MHz
VDS=15V,VGS=0V, F=1.0MHz
VDS=15V, RL=15 Ω, VGEN=10V,
RG=6 Ω ID=1A
VDS=15V,ID=10A,VGS=10V
IDS=10A, dI/dt=100A/μs
VGS=0V,IS=5A
Channel2
Min Typ Max
Unit
30 ‐
‐ ‐
‐ ‐
‐
1
±10
V
μA
μA
1.4 1.8 2.5
‐ 8.2 10
‐ 12.3 16
V
mΩ
mΩ
‐ 1.35 2.5 Ω
‐ 450 600 PF
‐ 318 ‐
PF
‐ 22 ‐
PF
‐ 8.5 16 nS
‐ 10 18 nS
‐ 14 26 nS
‐ 10.6 19 nS
‐ 8 12 nC
‐ 1.6 ‐
nC
‐ 1.2 ‐
nC
‐ 20.5 ‐
nS
‐ 7.2 ‐
nC
‐ 0.8 1.1 V
July 15, 2015 Techcode Semiconductor Limited www.techcodesemi.com
3
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