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TDM3412 MOSFET Datasheet |
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| Part Number | TDM3412 |
| Description | Dual N-Channel Enhancement Mode MOSFET |
| Manufacture | Techcode |
| Total Page | 13 Pages |
| Datasheet |
T echcode®
Dual
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3412 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
GENERAL FEATURES
Channel 1
RDS(ON) < 17.5mΩ @ VGS=4.5V
RDS(ON) < 10.8mΩ @ VGS=10V
Channel 2
RDS(ON) < 16mΩ @ VGS=4.5V
RDS(ON) < 10mΩ @ VGS=10V
High Power and current handling capability
ESD protection
Lead free product is available
Surface Mount Package
Application
PWM applications
Load switch
Power management
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage
VDS
Gate‐Source Voltage
VGS
Diode Continuous Forward Current
Is(TC=25℃)
Continuous Drain Current(note1)
ID(TC=25℃)
Pulse Drain Current Tested(note4)
IDP(TC=25℃)
Maximum Power Dissipation
PD(TC=25℃)
Continuous Drain Current
ID (TA=25℃)
ID (TA=70℃)
Pulse Drain Current Tested
IDP(TA=25℃)
Maximum Power Dissipation
PD(TA=25℃)
Thermal Resistance‐Junction to Ambient(note 5)
RθJA(t≤10s)
RθJA(Steady State)
Thermal Resistance‐Junction to Case
RθJC(Steady State)
Maximum Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
DATASHEET
TDM3412
Channel 1
30
+20
5
18
45
20
8.4
6.7
33.5
1.14
66
110
6
150
‐55 To 150
Channel 2
30
+20
5
18
45
20
9.1
7.3
36
1.13
60
100
6
Unit
V
V
A
A
A
W
A
A
W
℃/W
℃/W
℃
℃
July 15, 2015 Techcode Semiconductor Limited www.techcodesemi.com
1
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T echcode®
Dual
N-Channel
Enhancement
Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
DATASHEET
TDM3412
Parameter
Symbol Condition
OFF CHARACTERISTICS
Drain‐Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=24V,VGS=0V
Gate‐Body Leakage Current
IGSS VGS=±20V,VDS=0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain‐Source On‐State Resistance
RDS(ON)
VGS=10V, ID=10A
VGS=4.5V, ID=8A
DYNAMIC CHARACTERISTICS (Note3)
Gate Resistance
RG VGS=0V,VDS=0V,F=1MHz
Input Capacitance
Ciss VDS=15V,VGS=0V, F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (Note 3)
Turn‐on Delay Time
Turn‐on Rise Time
td(on)
tr
VDS=15V, RL=15 Ω, VGEN=10V,
RG=6 Ω ID=1A
Turn‐Off Delay Time
td(off)
Turn‐Off Fall Time
tf
Total Gate Charge
Qg VDS=15V,ID=10A,VGS=10V
Gate‐Source Charge
Qgs
Gate‐Drain Charge
Qgd
Body Diode Reverse Recovery Time
Trr
IDS=10A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge Qrr
DRAIN‐SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 2)
VSD VGS=0V,IS=5A
NOTES:
1. Max continuous current is limited by bonding wire.
2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
3. Guaranteed by design, not subject to production testing.
4. Pulse width is limited by max. junction temperature.
5. RθJA steady state t=999s
Channel1
Min Typ Max
Unit
30 ‐
‐ ‐
‐ ‐
‐
1
±10
V
μA
μA
1.4 1.8 2.5 V
‐ 9 10.8 mΩ
‐ 13.5 17.5 mΩ
‐ 1.35 2.5 Ω
‐ 450 600 PF
‐ 318 ‐
PF
‐ 22 ‐
PF
‐ 8.5 16 nS
‐ 10 18 nS
‐ 14 26 nS
‐ 10.6 19 nS
‐ 8 12 nC
‐ 1.6 ‐
nC
‐ 1.2 ‐
nC
‐ 20.5 ‐
nS
‐ 7.2 ‐
nC
‐ 0.8 1.1 V
July 15, 2015 Techcode Semiconductor Limited www.techcodesemi.com
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| Features | T echcode® Dual N-Channe l Enhancement Mode MOSFET DESCRIPTI ON The TDM3412 uses advanced trench technology to provide ex cellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GEN ERAL FEATURES Channel 1 RDS(O N) < 17.5mΩ @ VGS=4.5V R DS(ON) < 10.8mΩ @ VGS=10V C hannel 2 RDS(ON) < 16mΩ @ VGS= 4.5V RDS(ON) < 10mΩ @ VGS=10 V High Power and current hand ling capability ESD protection Lead free product is availabl e Surface Mount Package Appli cation PWM applications Lo ad switch Power management A BSOLUTE MAXIMUM RATINGS(TA=25℃unles s otherwise noted) Parameter Sy mbol Drain‐Source Voltage VDS Gate‐Source Voltage VGS Dio de Continuous Forward Current Is( TC=25℃) Continuous Drain Current(note1) ID(TC=25℃). |
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