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Mode MOSFET. TDM3430 Datasheet |
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T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3430 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
GENERAL FEATURES
RDS(ON) < 2.3mΩ @ VGS=4.5V
RDS(ON) < 1.7mΩ @ VGS=10V
High Power and current handling capability
Lead free product is available
Surface Mount Package
Application
PWM applications
Load switch
Power management
Jump Starter
DATASHEET
TDM3430
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage
VDS
Gate‐Source Voltage
VGS
Drain Current @ Continuous
ID（TA=25℃）
ID（TA=70℃）
Drain Current @ Current‐Pulsed (Note 1)
IDM（TC=25℃）
Drain Current @ Continuous
ID（TC=25℃）
ID（TC=100℃）
Maximum Power Dissipation (TA=25℃)
PD
Maximum Power Dissipation (TC=25℃)
PD
Maximum Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction‐to‐Ambient (Note 1)
RθJA
Limit
40
+20
40
30
400
180
160
2.7
300
150
‐55 To 150
50
Unit
V
V
A
A
A
A
A
W
W
℃
℃
℃/W
May 18, 2016 Techcode Semiconductor Limited www.techcodesemi.com
1
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T echcode®
N-Channel
Enhancement
Mode
MOSFET
DATASHEET
TDM3430
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol Condition
Min
OFF CHARACTERISTICS
Drain‐Source Breakdown Voltage
BVDSS VGS=0V ID=250μA
40
Zero Gate Voltage Drain Current
IDSS VDS=32V,VGS=0V
Gate‐Body Leakage Current
IGSS VGS=±20V,VDS=0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=250μA
1.4
Drain‐Source On‐State Resistance
RDS(ON) VGS=4.5V, ID=20A
VGS=10V, ID=25A
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Ciss VDS=20V,VGS=0V, F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (Note 3)
Turn‐on Delay Time
td(on)
VDS=20V, RL=20Ω, VGEN=10V,RG=6Ω
Turn‐on Rise Time
tr ID=1A
Turn‐Off Delay Time
td(off)
Turn‐Off Fall Time
tf
Total Gate Charge
Qg VDS=20V,ID=25A,VGS=4.5V
Gate‐Source Charge
Qgs
Gate‐Drain Charge
Qgd
Body Diode Reverse Recovery Time
Trr
IF=5A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge Qrr
DRAIN‐SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 2)
VSD VGS=0V,IS=20A
NOTES:
1. Pulse width limited by max. junction temperature.
2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
3. Guaranteed by design, not subject to production testing
Typ Max Unit
V
1 μA
±100 nA
1.7 2.5
2 2.3
1.6 1.7
V
mΩ
mΩ
5200
1500
172
PF
PF
PF
17
11.5
36
31
30
14
10.2
38
68
nS
nS
nS
nS
nC
nC
nC
nS
nC
0.8 1.1 V
May 18, 2016 Techcode Semiconductor Limited www.techcodesemi.com
2
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T echcode®
N-Channel
Enhancement
Mode
MOSFET
Package Information
TO263-3 Package
DATASHEET
TDM3430
May 18, 2016 Techcode Semiconductor Limited www.techcodesemi.com
3
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