Effect Transistors. MRF21010LSR1 Datasheet

MRF21010LSR1 Transistors. Datasheet pdf. Equivalent

MRF21010LSR1 Datasheet
Recommendation MRF21010LSR1 Datasheet
Part MRF21010LSR1
Description RF Power Field Effect Transistors
Feature MRF21010LSR1; Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mod.
Manufacture Freescale Semiconductor
Datasheet
Download MRF21010LSR1 Datasheet




Freescale Semiconductor MRF21010LSR1
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
Typical W--CDMA Performance: --45 dBc ACPR, 2140 MHz, 28 Volts,
5 MHz Offset/4.096 MHz BW, 15 DTCH
Output Power — 2.1 Watts
Power Gain — 13.5 dB
Efficiency — 21%
Capable of Handling 10:1 VSWR @ 28 Vdc, 2140 MHz,
10 Watts CW Output Power
Features
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large--Signal Impedance Parameters
Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
Document Number: MRF21010
Rev. 9, 5/2006
MRF21010LR1
MRF21010LSR1
2110--2170 MHz, 10 W, 28 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B--05, STYLE 1
NI--360
MRF21010LR1
CASE 360C--05, STYLE 1
NI--360S
MRF21010LSR1
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Symbol
VDSS
VGS
PD
Tstg
TC
TJ
Symbol
RθJC
Value
--0.5, +65
-- 0.5, +15
43.75
0.25
-- 65 to +150
150
200
Value
5.5
Class
1 (Minimum)
M1 (Minimum)
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
MRF21010LR1 MRF21010LSR1
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Freescale Semiconductor MRF21010LSR1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Off Characteristics
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID =10 µA)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 10 V, ID = 50 µA)
Gate Quiescent Voltage
(VDS = 28 V, ID = 100 mA)
Drain--Source On--Voltage
(VGS = 10 V, ID = 0.5 A)
Forward Transconductance
(VDS = 10 V, ID = 1 A)
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two--Tone Common Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
V(BR)DSS
IDSS
IGSS
VGS(th)
VGS(Q)
VDS(on)
gfs
Crss
Gps
Two--Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
η
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
IMD
Input Return Loss
(VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
IRL
Output Power, 1 dB Compression Point, CW
(VDD = 28 Vdc, IDQ = 100 mA, f = 2170 MHz)
Common--Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA,
f = 2170 MHz)
P1dB
Gps
Drain Efficiency
(VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA,
f = 2170 MHz)
η
Min
65
2.5
2.5
12
31
Typ
3
4
0.4
0.95
1
13.5
35
--35
--12
11
12
42
Max
Unit
— Vdc
10 µAdc
1 µAdc
4 Vdc
4.5 Vdc
0.5 Vdc
—S
— pF
— dB
—%
--30 dBc
--10 dB
—W
— dB
—%
MRF21010LR1 MRF21010LSR1
2
RF Device Data
Freescale Semiconductor



Freescale Semiconductor MRF21010LSR1
VGG R1
R2
+
C3 C4 C5
RF
INPUT
Z1
Z2
C2
C1
Z3
Z4
DUT
++
C6 C7 C8 C9
VDD
Z5
Z6
RF
Z7 Z8 OUTPUT
C10
Z1 0.964x 0.087Microstrip
Z2 0.905x 0.087Microstrip
Z3 0.433x 0.512Microstrip
Z4 1.068x 0.087Microstrip
Z5 0.752x 0.087Microstrip
Z6
Z7
Z8
PCB
0.453x 1.118Microstrip
0.921x 0.154Microstrip
0.925x 0.087Microstrip
Taconic TLX8--0300, 0.030,
εr = 2.55
Figure 1. MRF21010L Test Circuit Schematic
Table 5. MRF21010L Test Circuit Component Designations and Values
Part
Description
Part Number
C1 * (eared)
2.2 pF Chip Capacitor
100B2R2BW
(earless)
1.8 pF Chip Capacitor
100B1R8BW
C2 0.5 pF Chip Capacitor
100B0R5BW
C3, C9
10 µF, 35 V Tantalum Chip Capacitors
293D106X9035D2T
C4, C7
1 nF Chip Capacitors
100B102JW
C5, C6
5.6 pF Chip Capacitors
100B5R6BW
C8 470 µF, 63 V Electrolytic Capacitor
C10 10 pF Chip Capacitor
100B100GW
N1, N2
Type N Connector Flange Mounts
3052--1648--10
R1 1.0 kChip Resistor (0805)
R2 12 Chip Resistor (0805)
* Piece part depending on eared / earless version of the device.
VGG
C3 R1
R2
C4 C5
C6 C7
C8
C9
Manufacturer
ATC
ATC
ATC
Sprague--Vishay
ATC
ATC
ATC
Macom
VDD
RF Input
C2
C1
RF Output
C10
MRF21010
C--XM--00--001--01
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes
will have no impact on form, fit or function of the current product.
Figure 2. MRF21010L Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRF21010LR1 MRF21010LSR1
3







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