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2SK420 Datasheet, Equivalent, N-Channel MOSFET.

Silicon N-Channel MOSFET

Silicon N-Channel MOSFET

 

 

 

Part 2SK420
Description Silicon N-Channel MOSFET
Feature : SILICON N CHANNEL MPS TYPE (7T-MOS) i HIGH SPEED, HIGH VOLTAGE SWITCHING AP PLICATIONS.
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS .
FEATURES .
High Breakdown Voltage : V(br)dss= 400V .
High Forward Transfer Admittance : lYf s l=2.
5S (Typ.
) .
Low Leakage Current : LGSS=i100nA(Max.
) @ Vgs=±20V .
Enhancement -Mode IDS S= 1mA (Max.
) @ VdS=400V : Vth= l- 5~ 3.
5V @ lD=lmA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc=25 C) SYMBOL VDSX vgss ID Idp pd RATING 400 ±20 UNIT 6 .
Manufacture Sanyo
Datasheet
Download 2SK420 Datasheet
Part 2SK420
Description Silicon N-Channel MOSFET
Feature : SILICON N CHANNEL MPS TYPE (7T-MOS) i HIGH SPEED, HIGH VOLTAGE SWITCHING AP PLICATIONS.
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS .
FEATURES .
High Breakdown Voltage : V(br)dss= 400V .
High Forward Transfer Admittance : lYf s l=2.
5S (Typ.
) .
Low Leakage Current : LGSS=i100nA(Max.
) @ Vgs=±20V .
Enhancement -Mode IDS S= 1mA (Max.
) @ VdS=400V : Vth= l- 5~ 3.
5V @ lD=lmA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc=25 C) SYMBOL VDSX vgss ID Idp pd RATING 400 ±20 UNIT 6 .
Manufacture Sanyo
Datasheet
Download 2SK420 Datasheet

2SK420

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2SK420

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