HY1603D/U/S
N-Channel Enhancement Mode MOSFET
Features
30V/62A,
RDS(ON)= 4.0mΩ (typ.) @ VGS=10V
100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Halogen - Free Device Available
Pin Description
S
D G
TO-252-2L
S
D G
TO-251-3L
S
D G
TO-251-3L
Applications
High Frequency ...
