EPITAXIAL TRANSISTORS. BC857 Datasheet

BC857 TRANSISTORS. Datasheet pdf. Equivalent

Part BC857
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Feature Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Fo.
Manufacture CDIL
Datasheet
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BC857
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BC856 BC857
BC858
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BC856 = 3D
BC856A = 3A
BC856B = 3B
BC857 = 3H
BC857A = 3E
BC857B = 3F
BC857C = 3G
BC858 = 3M
BC858A = 3J
BC858B = 3K
BC858C = 3L
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (+VBE = 1 V)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation
up to Tamb = 60 °C
Junction temperature
Small–signal current gain
–IC = 2 mA; –VCE = 5 V; f = 1 kHz
Transition frequency at f = 100 MHz
–IC = 10 mA; –VCE = 5 V
Noise figure at RS = 2 kW
–IC = 200 mA; –VCE = 5 V
f = 1 kHz; B = 200 Hz
BC856 BC857 BC858
–VCEX max.
–VCE0 max.
–ICM max.
80
65
50 30 V
45 30 V
200 mA
Ptot max.
Tj max.
250 mW
150 ° C
hfe 75 to 900
fT >
100 MHz
F<
10 dB
Continental Device India Limited
Data Sheet
Page 1 of 3



BC857
BC856 BC857
BC858
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (+VBE = 1 V)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Collector current (peak value)
Emitter current (peak value)
Base current (peak value)
Total power dissipation
up to Tamb: 60 °C
Storage temperature
Junction temperature
THERMAL CHARACTERISTICS
Tj = Px (Rth j–t + Rth t–s + Rth s–a) + Tamb
Thermal resistance
From junction to tab
From tab to soldering points
From soldering points to ambient
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; –VCB = 30V; Tj = 25°C
–VCBO
–VCEX
–VCEO
–VEBO
–IC
–ICM
IEM
–IBM
Ptot
Tstg
Tj
Rth j–t
Rth t–s
Rth s–a
–ICBO
Tj = 150° C
Base–emitter voltage
–IC = 2 mA; –VCE = 5 V
–IC = 10 mA; –VCE = 5 V
Saturation voltages
–IC = 10 mA; –IB = 0,5 mA
–IC = 100 mA; –IB = 5 mA
Knee voltage
–IC = 10 mA; –IB = value for which
–IC = 11 mA at –VCE = 1 V
–ICBO
–VBE
–VBE
–VCEsat
–VBEsat
–VCEsat
–VBEsat
–VCEK
BC856 BC857 BC858
max. 80 50 30 V
max. 80 50 30 V
max. 65 45 30 V
max. 5
5 5V
max.
100 mA
max.
200 mA
max.
200 mA
max.
200 mA
max.
max.
250
–55 to +150
150
mW
°C
°C
= 60 K/W
= 280 K/W
= 90 K/W
typ. 1 nA
< 15 nA
< 4 mA
typ. 650 mV
600 to 750 mV
< 820 mV
typ. 75 mV
< 300 mV
typ. 700 mV
typ. 250 mV
< 650 mV
typ. 850 mV
typ. 250 mV
< 600 mV
Continental Device India Limited
Data Sheet
Page 2 of 3





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